US 2026/0040938 A1 · SEMICONDUCTOR MEMORY DEVICE

Abstract

According to one embodiment, a semiconductor memory device includes the following structure. First word lines are stacked above a substrate. Second word lines are stacked above the first word lines. A selection gate line is provided above the second word lines. A first pillar penetrates the first word lines in a first direction orthogonal to an upper surface of the substrate. A second pillar penetrates the second word lines and the selection gate line in the first direction. The second word lines include an upper word line disposed around an upper layer portion of the second pillar, a middle word line disposed around a middle layer portion below the upper layer portion, and a lower word line disposed around a lower layer portion below the middle layer portion. A film thickness of the upper word line is thicker than that of the middle word line.

Claims20

Dependent claims

A semiconductor memory device comprising:

a first plurality of word lines stacked above a substrate;
a second plurality of word lines stacked above the first plurality of word lines;
a selection gate line provided above the second plurality of word lines;
a first pillar provided above the substrate and penetrating the first plurality of word lines in a first direction orthogonal to an upper surface of the substrate;
and
a second pillar provided above the first pillar and penetrating the second plurality of word lines and the selection gate line in the first direction,
wherein the second plurality of word lines include an upper word line disposed around an upper layer portion of the second pillar, a middle word line disposed around a middle layer portion below the upper layer portion, and a lower word line disposed around a lower layer portion below the middle layer portion, and
a film thickness of the upper word line is thicker than a film thickness of the middle word line.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor memory device

Life of this patent

Semiconductor memory device

Life of this patent

Abstract

Claims20