Semiconductor device and method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorsSeo In LEE, Yu Jin KWON, Byung Soo PARK
Life of this patent
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Abstract
A semiconductor device includes a gate structure including a plurality of conductive layers alternately stacked with a plurality of insulating layers; a contact structure extending within the gate structure and electrically connected to one of the conductive layers; a plurality of second supports, each second support including a pillar having a center located within a first distance of a center of the contact structure and protrusions extending between the pillar and the plurality of conductive layers; and a plurality of first supports at least partially surrounded by the plurality of protrusions.
Claims26
A semiconductor device comprising:
- a gate structure including conductive layers and insulating layers that are alternately stacked;
- second supports each including a pillar located at a perimeter of a first figure defined on an upper surface of the gate structure and protrusions extending from sidewalls of the pillar toward the conductive layers;
- a contact structure extending through the gate structure inside the first figure and electrically connected to one of the conductive layers;
- and
- first supports penetrating through the protrusions.
A semiconductor device comprising:
- a gate structure including conductive layers and insulating layers that are alternately stacked;
- a contact structure extending through the gate structure and electrically connected to one of the conductive layers;
- second supports each including a pillar extending through the gate structure and located to be spaced apart from the contact structure by a first distance and protrusions extending from a center of the pillar toward the conductive layers by a second distance;
- and
- first supports located within the second distance from the second supports.
A semiconductor device comprising:
- a gate structure including conductive layers alternately stacked with insulating layers;
- a contact structure extending within the gate structure and electrically connected to one of the conductive layers;
- second supports, each including a pillar having a center located within a first distance of a center of the contact structure and protrusions extending between the pillar and the conductive layers;
- and
- first supports at least partially surrounded by the protrusions.
A semiconductor device comprising:
- a gate structure including conductive layers alternately stacked with insulating layers;
- a contact structure extending within the gate structure and electrically connected to one of the conductive layers;
- second supports, each including a pillar spaced apart from the contact structure by a first distance and including protrusions extending between the pillar and the conductive layers, wherein the pillar extends through the gate structure and the protrusions extend to a second distance from a center of the pillar;
- and
- first supports located within the second distance of one of the second supports.
Dependencies are inferred from the claim text.