Offset frontside and backside interconnect tracks of a standard unit cell

An electronic device, comprising:

• a chip package comprising one or more dies, at least one of the one or more dies comprising
• a first semiconductor device comprising a first semiconductor region extending from a first source or drain region to a second source or drain region in a first direction, and a first portion of a gate structure extending over the first semiconductor region in a second direction substantially orthogonal to the first direction;
• a second semiconductor device comprising a second semiconductor region extending from a third source or drain region to a fourth source or drain region in the first direction, and a second portion of the gate structure extending over the second semiconductor region in the second direction;
• wherein the first source or drain region is spaced from the third source or drain region in a third direction substantially orthogonal to the first and second directions, and the second source or drain region is spaced from the fourth source or drain region in the third direction;
• a first plurality of conductive layers above the first semiconductor device and extending lengthwise along the first direction, the first plurality of conductive layers being separated from one another along the second direction by a first pitch;
• and
• a second plurality of conductive layers below the second semiconductor device and extending lengthwise along the first direction, the second plurality of conductive layers being separated from one another along the second direction by a second pitch,
• wherein the first plurality of conductive layers are offset from the second plurality of conductive layers along the second direction by between 1 and 5 nm.

An integrated circuit comprising:

• a standard unit cell having a first semiconductor device and a second semiconductor device, the standard unit cell having a layout that is repeated across at least a portion of the integrated circuit;
• wherein the first semiconductor device comprises a first semiconductor region extending from a first source or drain region to a second source or drain region in a first direction, and a first portion of a gate structure extending over the first semiconductor region in a second direction substantially orthogonal to the first direction;
• wherein the second semiconductor device comprises a second semiconductor region extending from a third source or drain region to a fourth source or drain region in the first direction, and a second portion of the gate structure extending over the second semiconductor region in the second direction;
• wherein the first source or drain region is spaced from the third source or drain region in a third direction substantially orthogonal to the first and second directions, and the second source or drain region is spaced from the fourth source or drain region in the third direction;
• a first plurality of parallel conductive layers above the first semiconductor device;
• and
• a second plurality of parallel conductive layers below the second semiconductor device;
• wherein the first plurality of conductive layers are offset from the second plurality of conductive layers along the first direction or along the second direction;
• and
• wherein a first conductive layer of the first plurality of conductive layers is aligned along a first boundary of the standard unit cell, and a second conductive layer of the second plurality of conductive layers is aligned along a second boundary of the standard unit cell, the second boundary being parallel to the first boundary.