Three-dimensional stack with backside power distribution network (bspdn) contacts

A method of manufacturing a device, comprising:

• forming a first wafer comprising a first dielectric layer, a first plurality of bonding pads disposed in the first dielectric layer, and a first circuit disposed on the first dielectric layer;
• forming a second wafer comprising a second dielectric layer, a second plurality of bonding pads disposed in the second dielectric layer, and a second circuit disposed on the second dielectric layer;
• forming a plurality of through-vias including at least one power via in the second wafer;
• forming a backside power distribution network (BSPDN) layer disposed on the second wafer;
• and
• bonding the first plurality of bonding pads with the second plurality of bonding pads.

An apparatus, comprising:

• a device that comprises:
• a first wafer, comprising:
• a first dielectric layer;
• a first plurality of bonding pads disposed in the first dielectric layer;
• and
• a first circuit disposed on the first dielectric layer;
• and
• a second wafer, comprising:
• a second dielectric layer;
• a second plurality of bonding pads disposed in the second dielectric layer;
• and
• a second circuit disposed on the second dielectric layer;
• a plurality of through-vias including at least one power via in the second wafer;
• and
• a backside power distribution network (BSPDN) layer disposed on the second wafer,
• wherein the first plurality of bonding pads is bonded with the second plurality of bonding pads.