Through Via Structure

A method comprising:

• receiving a first semiconductor structure, wherein the first semiconductor structure includes a dielectric layer over a semiconductor substrate and the first semiconductor structure further includes a stack of interconnect structures disposed in the dielectric layer;
• forming a conductive structure that extends a first distance through the dielectric layer of the first semiconductor structure and a second distance through the semiconductor substrate of the first semiconductor structure, wherein a ratio of the first distance to the second distance is about 0.25 to about 0.5 and the stack of interconnect structures of the first semiconductor structure forms a ring around the conductive structure;
• and
• attaching a second semiconductor structure to the first semiconductor structure, wherein the conductive structure extends to the second semiconductor structure.

A stacked structure arrangement comprising:

• a first chip that includes a first multilayer interconnect structure disposed over a first device substrate, wherein the first multilayer interconnect structure includes a guard ring;
• a second chip attached to the first chip, wherein the second chip includes a second multilayer interconnect structure disposed over a second device substrate;
• and
• a through via that electrically connects the first chip and the second chip, wherein the through via extends along a stacked direction through the first multilayer interconnect structure, through the first device substrate, and to the second multilayer interconnect structure, wherein:
• the through via has a total length along the stacked direction, wherein the total length is a sum of a first length of the through via along the stacked direction in the first multilayer interconnect structure and a second length of the through via along the stacked direction in the first device substrate,
• the first length is less than the second length, and
• the guard ring is disposed around the through via.