Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsTeng-Chuan Hu, Chu-Fu Lin, Chuan-Lan Lin, Chun-Hung Chen, Chiao-Hui Tu
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Abstract
A method for fabricating semiconductor device includes the steps of first providing a stack structure having a shallow trench isolation (STI) under a first substrate, a contact etch stop layer (CESL) under the STI, an interlayer dielectric (ILD) layer under the CESL, and a first metal interconnection under the ILD layer and then forming a second metal interconnection penetrating through the first substrate, the STI, the CESL, and the ILD layer to contact the first metal interconnection and a liner adjacent to a sidewall of the second metal interconnection.
Claims15
A method for fabricating semiconductor device, comprising:
- providing a stack structure comprising:
- a shallow trench isolation (STI) under a first substrate;
- a contact etch stop layer (CESL) under the STI;
- an interlayer dielectric (ILD) layer under the CESL;
- and
- a first metal interconnection under the ILD layer;
- and
- forming a second metal interconnection penetrating through the first substrate, the STI, the CESL, and the ILD layer to contact the first metal interconnection and a liner adjacent to a sidewall of the second metal interconnection.
A semiconductor device, comprising:
- a shallow trench isolation (STI) under a first substrate;
- a contact etch stop layer (CESL) under the STI;
- an interlayer dielectric (ILD) layer under the CESL;
- a first metal interconnection under the ILD layer;
- a second metal interconnection penetrating through the first substrate, the STI, the CESL, and the ILD layer to contact the first metal interconnection;
- and
- a liner adjacent to a sidewall of the second metal interconnection.
Dependencies are inferred from the claim text.