Semiconductor device and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHUNG-TE LIN
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes: performing a first etching operation to form a first trench in a semiconductor substrate; forming a doped region to on a first sidewall of the first trench; performing a second etching operation on the first trench to form a second trench in the semiconductor substrate; depositing a dielectric material in the first and second trenches to form an isolation structure, wherein the isolation structure defines a channel region of the semiconductor device from a top-view perspective; and depositing a dielectric layer on the semiconductor substrate over the doped region and the channel region.
Claims20
A method of manufacturing a semiconductor device, comprising:
- performing a first etching operation to form a first trench in a semiconductor substrate;
- forming a doped region to on a first sidewall of the first trench;
- performing a second etching operation on the first trench to form a second trench in the semiconductor substrate;
- depositing a dielectric material in the first and second trenches to form an isolation structure, wherein the isolation structure defines a channel region of the semiconductor device from a top-view perspective;
- and
- depositing a dielectric layer on the semiconductor substrate over the doped region and the channel region.
A method of manufacturing a semiconductor device, comprising:
- performing a first etching operation to form a first trench in a semiconductor substrate;
- forming a doped region on a sidewall of the first trench;
- performing a second etching operation on the first trench to form a second trench in the semiconductor substrate;
- forming an isolation structure in the first and second trenches to define an oxide definition (OD) region of the semiconductor device from a top-view perspective, wherein the doped region is arranged on a sidewall of the OD region;
- and
- depositing a dielectric layer on the semiconductor substrate, wherein the dielectric layer has a first thickness in a central region over the OD region and a second thickness, less than the first thickness, aligned with the doped region.
A semiconductor device, comprising:
- a first isolation structure in a semiconductor substrate;
- a second isolation structure adjacent to the first isolation structure in the semiconductor substrate, wherein the first isolation structure and the second isolation structure define boundaries of a channel region of the semiconductor device;
- a gate dielectric layer on the semiconductor substrate between the first isolation structure and the second isolation structure;
- a gate structure over the gate dielectric layer;
- and
- a first doped region arranged on a first sidewall of the channel region in the semiconductor substrate, the first sidewall facing the first or second isolation structure.
Dependencies are inferred from the claim text.