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US 2026/0040909 A1Published application
Semiconductor device including isolation structure with impurity and method for manufacturing the same
AssigneeNanya Technology Corporation
InventorsKUO-CHUNG HSU, EN-JUI LI
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Abstract
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate and a first isolation structure. The substrate has a cell region and a peripheral region. The first isolation structure is disposed in the cell region of the substrate. The first isolation structure includes a first dielectric layer and a second dielectric layer. The second dielectric layer is spaced apart from the substrate by the first dielectric layer. The second dielectric layer is doped with an impurity.
Claims8
A method for manufacturing a semiconductor device, comprising:
- providing a substrate comprising a cell region and a peripheral region;
- forming a first isolation structure in the cell region and a second isolation structure in the peripheral region;
- and
- doping the first isolation structure with an impurity.
1 more element
Dependencies are inferred from the claim text.