Method for manufacturing semiconductor device
AssigneeHPSP Co., Ltd.
InventorSungkil CHO
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Abstract
The present disclosure relates to a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device, according to one embodiment, may comprise a gap-fill step of burying a gap-fill oxide in trenches formed on a substrate, so as to form a gap-fill oxide film. In one embodiment, the gap-fill step can comprise a high pressure oxidation (HPO) step. According to embodiments, a semiconductor device with electrical properties superior to those of a conventional semiconductor device can be manufactured.
Claims11
A method for manufacturing a semiconductor device, the method comprising:
- a gap-fill process of filling a trench formed in a substrate with a gap-fill oxide, thereby forming a gap-fill oxide film, wherein the gap-fill process includes a high-pressure oxidation (HPO) process.
A method for manufacturing a semiconductor device, the method comprising:
- etching a substrate to form a trench therein;
- forming a liner layer on an inner surface of the trench;
- forming a gap-fill oxide film on the liner layer to gap-fill an inside of the trench;
- and
- planarizing the gap-fill oxide film,
- wherein the gap-fill oxide film is formed in a gap-fill process including a high-pressure oxidation (HPO) process.
Dependencies are inferred from the claim text.