Method for manufacturing a support substrate for a radiofrequency application

Abstract

A method for manufacturing a support substrate comprising a charge-trapping layer for a semiconductor-on-insulator or piezoelectric-on-insulator structure for a radio-frequency application, includes: placing a base substrate comprising a layer of native silicon oxide in a deposition chamber; raising the temperature of the deposition chamber to a deposition temperature of the charge-trapping layer; introducing an oxidizing gas into the deposition chamber in order to preserve the layer of native silicon oxide during the temperature rise; venting the oxygen from the deposition chamber at the formation temperature of the charge-trapping layer; and-depositing, in the deposition chamber, the charge-trapping layer of polycrystalline silicon on the layer of native silicon oxide.

Dependencies are inferred from the claim text.