Nanosheet transistor devices and related fabrication methods

A transistor device comprising:

• a substrate;
• a source region and a drain region on the substrate;
• one or more first channel regions between the source region and the drain region;
• an isolation region that is between the substrate and the one or more first channel regions;
• and
• a semiconductor layer that is between the isolation region and the one or more first channel regions, wherein the semiconductor layer continuously extends from the source region to the drain region.

A system, comprising:

• an isolation region;
• a semiconductor layer having opposing first and second surfaces, wherein the first surface of the semiconductor layer is on the isolation region;
• a nanosheet stack comprising a plurality of nanosheets on the second surface of the semiconductor layer;
• and
• a source region and a drain region directly on the second surface of the semiconductor layer.