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US 2026/0040863 A1Published application
Enhanced Atomic Layer Etching Process with Optimized Gas Flow Control for Semiconductor Manufacturing
AssigneeInspiring Atoms Pte Ltd
InventorYang Pan
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Abstract
Disclosed herein is an enhanced atomic layer etching (ALE) process for semiconductor manufacturing, focusing on improved gas flow control. It introduces a method of maintaining constant inert gas flow for both surface modification and sputtering steps, significantly reducing gas exchange time, and improving cycle efficiency. Key to this innovation is the pre-determined, fixed set points for mass flow controllers (MFCs) and the valve, streamlining operations and ensuring consistent production quality.
Claims20
A process system for performing ALE process, comprising:
- a chamber maintaining an interior space for a vacuum environment;
- a plasma source coupled to an RF power generator configured to generate plasma in the chamber;
- a bias unit operatively connected to a chuck;
- a gas distribution unit configured to receive at least a first process gas with a first MFC and a second process gas with a second MFC from a gas source;
- and
- a controller configured to operate the process system in steps including a surface modification step and a sputtering step sequentially, wherein the controller operates the gas distribution unit for receiving the first and the second process gases with predetermined flow rates at the surface modification step, and wherein the controller further operates the gas distribution unit for ceasing receiving the first process gas at the sputtering step, with the second gas flow remaining constant for said steps.
3 more elements
A method of performing an ALE process in a process system comprising:
- a. moving by an actuator a movable part for a valve associated with a pump to a position according to a predetermined set point, wherein the position is fixed for the ALE process including at least a surface modification step, and a sputtering step, wherein the position of the movable part influences gas extraction rate from a chamber;
- b. receiving a mixed first and second process gases at predetermined flow rates by a gas distribution unit, and receiving by a plasma source a first RF power from a RF power generator;
- c. exposing a substrate surface to a plasma generated in a chamber for a first predetermined duration, wherein the substrate is placed on a chuck;
- d. switching off the first process gas while maintaining the flow rate of the second process gas, wherein the position of the movable part, and set points of a first and a second MFCs for the process gases are unchanged, wherein the first process gas is switched off by a valve placed between the first MFC and the gas distribution unit;
- e. receiving by the plasma source a second RF power from the RF power generator, and receiving a bias by the chuck from a bias unit;
- f. exposing the substrate surface for a second predetermined duration;
- and
- g. repeating steps a to f to complete the ALE process.
5 more elements
Dependencies are inferred from the claim text.