Semiconductor device
OwnerSergei STUDENIKIN, Maksym MYRONOVinventors
Life of this patent
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Abstract
A semiconductor device (1) is disclosed. The semiconductor device (1) comprise a substrate (2), a semiconductor structure (4) disposed on the substrate, having a principal surface (5), and comprising a semiconductor layer (10) running between first and second ends (12, 13); and a metal gate (30) disposed on the principal surface of the semiconductor structure such that a Schottky junction (31) is formed between the metal gate and the semiconductor structure, wherein the metal gate is disposed over a section (19) of the semiconductor layer between the first and second ends of the semiconductor layer for forming a channel in the semiconductor layer and controlling conduction of charge carriers between the first and second ends of the semiconductor layer.
Claims20
A semiconductor device (1), comprising:
- a substrate (2);
- a semiconductor structure (4) disposed on the substrate, having a principal surface (5), and comprising a semiconductor layer (10) running between first and second ends (12, 13);
- and
- a metal gate (30) disposed on the principal surface of the semiconductor structure such that a Schottky junction (31) is formed between the metal gate and the semiconductor structure, wherein the metal gate is disposed over a section (19) of the semiconductor layer between the first and second ends of the semiconductor layer for forming a channel (18) in the semiconductor layer and controlling conduction of charge carriers between the first and second ends of the semiconductor layer.
A semiconductor device (1), comprising:
- a substrate (2);
- a semiconductor structure (4) disposed on the substrate, having a principal surface (5), and comprising a semiconductor layer (10) running between first and second ends (12, 13);
- a first gate structure (33) disposed over the semiconductor structure for accumulating charge carriers (32) in the semiconductor layer between the first end of the semiconductor layer and the section of the semiconductor layer to form a first contact region (20) to a channel (18) formed or formable in a section (19) of the semiconductor layer between the first and second ends of the semiconductor layer;
- and
- a second gate structure (36) disposed over the semiconductor structure for accumulating charge carriers in the semiconductor layer between the section of the semiconductor layer and the second end of the semiconductor layer to form a second contact region to the channel.
Dependencies are inferred from the claim text.