Device protected layer for oled advanced patterning

A device, comprising:

• a substrate;
• a plurality of overhang structures, each overhang structure defined a second structure disposed over a first structure, the second structure extending laterally past the first structure, adjacent overhang structures of the plurality overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel;
• the first sub-pixel comprising:
• a first anode;
• a first organic light-emitting (OLE) material;
• a first cathode disposed over the first OLE material;
• a first encapsulation layer;
• a first protection layer disposed on the first encapsulation layer extending under at least a portion of the overhang structures and along a sidewall of the first structure;
• and
• a second protection layer disposed on the first protection layer, and the second sub-pixel comprising:
• a second anode;
• a second OLE material;
• a second cathode disposed over the second OLE material;
• a second encapsulation layer;
• and
• the second protection layer disposed on the second encapsulation layer extending under at least the portion of the overhang structures and along the sidewall of the first structure.

A method, comprising:

• disposing a first organic light-emitting (OLE) material, a first cathode, a first encapsulation layer, and a first protection layer over a substrate, the substrate having:
• a plurality of overhang structures, each overhang structure is defined by a second structure disposed over a first structure, the second structure extending laterally past the first structure, adjacent overhang structures of the plurality overhang structures define a plurality of sub-pixels including at least a first sub-pixel and a second sub-pixel;
• forming a resist in a well of the first sub-pixel;
• removing the first protection layer, the first cathode, the first OLE material, and the first encapsulation layer exposed by the resist;
• removing the resist in the well of the first sub-pixel;
• disposing a second OLE material, a second cathode, a second encapsulation layer, and a second protection layer over the substrate;
• forming a resist in the well of the second sub-pixel;
• and
• removing the second protection layer, the second cathode, and the second OLE material, and the second encapsulation layer exposed by the resist.

A method, comprising:

• providing a substrate having a first well of a first sub-pixel defined by adjacent overhang structures disposed over the substrate;
• disposing a first organic light-emitting (OLE) material, a first cathode, and a first encapsulation layer;
• forming a first resist in a well of the first sub-pixel;
• removing the first OLE material, the first cathode, and the first encapsulation layer exposed by the first resist;
• removing the first resist;
• disposing a first protection layer over the substrate;
• forming a second resist over the first sub-pixel to expose an area of a second sub-pixel;
• etching a second layer and a first layer to form a well of a second sub-pixel;
• disposing a second OLE material, a second cathode, and a second encapsulation layer over the substrate;
• forming a third resist in the well of the second sub-pixel;
• removing the second OLE material, the second cathode, and the second encapsulation layer exposed by the third resist;
• and
• depositing a second protection layer over the substrate.

A method, comprising:

• providing a substrate having a first well of a first sub-pixel defined by adjacent overhang structures disposed over the substrate;
• disposing a first organic light-emitting (OLE) material, a first cathode, a first encapsulation layer, and a first protective layer;
• forming a first resist in a well of the first sub-pixel;
• removing the first OLE material, the first cathode, the first encapsulation layer, and the first protective layer exposed by the first resist;
• removing the first resist;
• forming a second resist over the first sub-pixel to expose an area of a second sub-pixel;
• etching a second layer and a first layer to form a well of a second sub-pixel;
• disposing a second OLE material, a second cathode, a second encapsulation layer, and a second protective layer over the substrate;
• forming a third resist in the well of the second sub-pixel;
• removing the second OLE material, the second cathode, the second encapsulation layer, and the second protection layer exposed by the third resist;
• and
• removing the third resist.