Photovoltaic cells with bypass diodes
AssigneeTandem PV
InventorsColin David BAILIE, Chris EBERSPACHER
Life of this patent
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Abstract
A method includes depositing a portion of a first contact layer over a first substrate layer, depositing a portion of a first charge transport layer (CTL) over the first contact layer, depositing a portion of an absorber layer over the first CTL. and forming one or more diode regions. The forming of the one or more diode regions includes forming a plurality of features that extend through the portion of the absorber layer, and depositing a portion of a second CTL over the absorber layer after forming the plurality of features, wherein each feature of the plurality of features comprises the first CTL and the second CTL.
Claims20
A method of forming a photovoltaic device, comprising:
- depositing a first contact layer over a surface of a first substrate;
- depositing a first charge transport layer (CTL) over the first contact layer;
- depositing an absorber layer over the first CTL;
- and
- forming one or more diode regions, the forming of the one or more diode regions comprising:
- forming a plurality of features within the photovoltaic device that extend through at least a portion of the deposited absorber layer, and
- depositing a second charge transport layer (CTL) over the absorber layer and within the formed plurality of features, wherein each feature of the plurality of features comprises the first CTL and the second CTL.
A method comprising:
- depositing a first contact layer over a surface of a first substrate layer;
- depositing a first charge transport layer (CTL) over the first contact layer;
- depositing an absorber layer over the first CTL;
- and
- forming one or more diode regions, the forming of the one or more diode regions comprising:
- forming a plurality of features that extend through the absorber layer, wherein forming the plurality of features comprises forming an array of dot shaped structures;
- and
- depositing a second CTL over the absorber layer after forming the plurality of features, wherein each feature of the plurality of features comprises the first CTL and the second CTL.
A method comprising:
- depositing a portion of a first contact layer over a first substrate layer;
- depositing a portion of a first charge transport layer (CTL) over the first contact layer;
- depositing a portion of an absorber layer over the first CTL;
- and
- forming one or more diode regions, the forming of the one or more diode regions comprising:
- forming a plurality of features that extend through the portion of the absorber layer, wherein forming each feature of the plurality of features comprises forming a scribe line that comprises a trench or a slot shaped structure;
- and
- depositing a portion of a second CTL over the absorber layer after forming the plurality of features, wherein each feature of the plurality of features comprises the first CTL and the second CTL.
Dependencies are inferred from the claim text.