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US 2026/0040735 A1Published application
BULK InGaN COLOR CONVERSION FOR INTEGRATED CIRCUIT LIGHT SOURCES
AssigneeTectus Corporation
InventorPaul Scott Martin
Life of this patent
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Abstract
An LED source includes a CMOS layer, a GaN LED layer, and a bulk InxGa1-xN color conversion layer. The CMOS layer contains CMOS driver circuits. The GaN LED layer is attached to the CMOS layer. It is patterned into an array of LEDs connected to and driven by the driver circuits. The bulk InxGa1-xN color conversion layer is attached to the GaN LED layer. The bulk InxGa1-xN color conversion layer is patterned into color conversion elements aligned with corresponding LEDs to convert light from the LEDs to a different wavelength.
Claims20
An LED source comprising:
- a CMOS layer that includes CMOS driver circuits;
- a GaN LED layer attached to the CMOS layer, the GaN LED layer patterned into an array of LEDs connected to and driven by the driver circuits;
- and
- a bulk InxGa1-xN color conversion layer attached to the GaN LED layer, the bulk InxGa1-xN color conversion layer patterned into color conversion elements aligned with corresponding LEDs to convert light from the LEDs to a different wavelength.
1 more element
A light source comprising:
- a die containing a plurality of source elements that produce light;
- and
- bulk InxGa1-xN color conversion elements supported by the die and positioned to receive the light from the source elements and convert the received light to a different wavelength.
A process for making an LED source comprising:
- fabricating a GaN LED layer patterned into an array of LEDs;
- and
- fabricating a bulk InxGa1-xN color conversion layer on the GaN LED layer, the bulk InxGa1-xN color conversion layer patterned into color conversion elements aligned with corresponding LEDs to convert light from the LEDs to a different wavelength.
Dependencies are inferred from the claim text.