Light-emitting element

A light-emitting element, comprising:

• a stacked body made of a nitride semiconductor, the stacked body comprising:
• a first n-type layer,
• a first active layer located on the first n-type layer,
• a first p-type layer located on the first active layer,
• a second n-type layer located on the first p-type layer,
• a second active layer located on the second n-type layer, and
• a second p-type layer located on the second active layer;
• a first electrode electrically connected with the first n-type layer;
• a second electrode electrically connected with the second n-type layer;
• a third electrode electrically connected with the second p-type layer;
• and
• a fourth electrode located at an upper surface of the second p-type layer;
• wherein:
• a resistivity of the fourth electrode is lower than a resistivity of the second p-type layer;
• the third electrode is located at an upper surface of the fourth electrode;
• the first n-type layer comprises a first n-side contact portion contacting the first electrode;
• the second n-type layer comprises a second n-side contact portion contacting the second electrode;
• and
• in a top view a center of the first n-side contact portion is separated from a first line that passes through a center of the second n-side contact portion and is parallel to a first direction.

A light-emitting element, comprising:

• a stacked body made of a nitride semiconductor, the stacked body comprising:
• a first n-type layer,
• a first active layer located on the first n-type layer,
• a first p-type layer located on the first active layer,
• a second n-type layer located on the first p-type layer,
• a second active layer located on the second n-type layer, and
• a second p-type layer located on the second active layer;
• a first electrode electrically connected with the first n-type layer;
• a second electrode electrically connected with the second n-type layer;
• and
• a third electrode electrically connected with the second p-type layer;
• wherein:
• the first n-type layer comprises a first n-side contact portion contacting the first electrode;
• the second n-type layer comprises a second n-side contact portion contacting the second electrode;
• in a top view a center of the first n-side contact portion is separated from a first line that passes through a center of the second n-side contact portion and is parallel to a first direction;
• a plurality of the second n-side contact portions are separated from each other in the first direction;
• and
• a shortest distance between the second n-side contact portion and the first n-side contact portion is less than a distance between second n-side contact portions among the plurality of second n-side contact portions that are next to each other in the first direction in a top view.