Method for processing an optoelectronic device and optoelectronic device

A method for processing an optoelectronic device, the method comprising:

• providing a growth substrate having one of a [111], [110] or [100] surface with a (GaxAl1−x)yIn1−yP buffer layer located on the growth substrate having a parameter x between 0.2 and 0.8, inclusive, and a parameter y between 0.3 and 0.7, inclusive;
• re-growing a doped (GaxAl1−x)yIn1−yP layer with a parameter x between 0.4 and 0.6, inclusive, and a parameter y between 0.3 and 0.7, inclusive, on exposed surfaces of an AlInP layer deposited on the buffer layer, the exposed surfaces surrounded by a structured hard mask comprising an amorphous material on non-exposed surfaces of the AlInP layer, wherein edges of the hard mask adjacent to at least one exposed portion of the of a surface of the AlInP layer extend along the [111] B lateral surfaces when the substrate has a [111] surface, or extend along the [110] lateral surfaces when the substrate has a surface, or extend along the [100] lateral surfaces when the substrate has a surface;
• re-growing an active layer structure on the doped (GaxAl1−x)yIn1−yP layer;
• re-growing a doped or intrinsic (GaxAl1−x)yIn1−yP layer along a top surface and sidewalls of the active layer down to the hard mask, wherein the (GaxAl1−x)yIn1−yP layer comprises a bandgap that is larger than a bandgap of the active layer;
• depositing an unstructured conductive material;
• and
• mesa-structuring the optoelectronic device.

An optoelectronic device comprising:

• a structured semiconductor layer stack arranged between a first contact area on a light emission surface and a second contact area on a surface opposite the light emission surface, the structured semiconductor layer stack comprising:
• a hard mask layer including an amorphous material having a recess;
• a doped (GaxAl1−x)yIn1−yP layer with a parameter x between 0.4 and 0.6, inclusive, and a parameter y between 0.3 and 0.7, inclusive above or within the recess of the hard mask layer with its top surface elevated above a surface of the hard mask;
• an active layer selectively arranged on the top surface of the (GaxAl1−x)yIn1−yP layer, the active layer including a quantum well or multi-quantum well structure based on InGaAlP material with different Al contents between well layers and adjacent barrier layers of the quantum well or the multi-quantum well structure;
• and
• a doped or intrinsic (GaxAl1−x)yIn1−yP layer arranged on a top surface and sidewalls of the active layer tapering down to the hard mask layer.