Semiconductor device and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSin-Yi Jiang, Po-Chun Liu, Yi-Shin Chu, Hsiang-Lin Chen, Yin-Kai Liao, Sung-Wen Huang Chen, Hsing-Chih Lin
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Abstract
Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a substrate comprising a first material. A semiconductor layer is on the substrate and comprises a second material different from the first material. A buffer layer is arranged between the semiconductor layer and the substrate. The buffer layer comprises the first material and the second material.
Claims20
An integrated chip (IC), comprising:
- a substrate comprising a first material;
- a semiconductor layer on the substrate and comprising a second material different from the first material;
- and
- a buffer layer arranged between the semiconductor layer and the substrate, wherein the buffer layer comprises the first material and the second material.
An integrated chip (IC), comprising:
- a substrate comprising an upper surface;
- a germanium layer over the upper surface of the substrate;
- an isolation structure disposed in the substrate and on opposing sides of the germanium layer;
- a buffer layer disposed between the upper surface of the substrate and the germanium layer, wherein the buffer layer comprises silicon and germanium;
- and
- a passivation layer contacting a top surface of the germanium layer, wherein the passivation layer comprises epitaxial silicon.
A method for forming an integrated chip (IC), the method comprising:
- forming a buffer layer on a substrate, wherein the substrate comprises a first material, wherein the buffer layer comprises the first material and a second material different from the first material;
- forming a semiconductor layer on the buffer layer, wherein the semiconductor layer comprises the second material;
- and
- forming a passivation layer along a top surface of the semiconductor layer, wherein the passivation layer comprises the first material.
Dependencies are inferred from the claim text.