Single-photon detector and manufacturing method therefor

Abstract

A method of manufacturing single-photon detector includes forming a first electrode on a front side of a substrate, removing the substrate and preforming ion implantation on a backside of an epitaxial layer to form a contact region for a second electrode, which extends from the surface of the epitaxial layer to a first predetermined depth within the epitaxial layer. The second electrode is be electrically connected to the contact region for the second electrode. Since the substrate is removed, the epitaxial layer, which is provided as a semiconductor layer, has a uniform thickness. The contact region for the second electrode has a uniform thickness, and its dopant concentration is easy to control and adjust. Thus, the second electrode can be formed so as to have uniform contact resistance across its different regions.

Dependencies are inferred from the claim text.