Semiconductor light-receiving device
AssigneeSumitomo Electric Industries, Ltd.
InventorTakashi KATO
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Abstract
A semiconductor light-receiving device includes an indium phosphide substrate, a first III-V compound semiconductor layer of a first conductivity type, a second III-V compound semiconductor layer of a second conductivity type, and an optical absorption layer disposed between the first III-V compound semiconductor layer and the second III-V compound semiconductor layer. The first III-V compound semiconductor layer is disposed between the indium phosphide substrate and the optical absorption layer. The optical absorption layer has a type-II superlattice structure. The superlattice structure includes a gallium indium arsenide layer and a gallium arsenide antimonide layer. The gallium indium arsenide layer has a compression strain. The gallium arsenide antimonide layer has a tensile strain.
Claims8
A semiconductor light-receiving device comprising:
- an indium phosphide substrate;
- a first III-V compound semiconductor layer of a first conductivity type;
- a second III-V compound semiconductor layer of a second conductivity type;
- and
- an optical absorption layer disposed between the first III-V compound semiconductor layer and the second III-V compound semiconductor layer,
- wherein the first III-V compound semiconductor layer is disposed between the indium phosphide substrate and the optical absorption layer,
- the optical absorption layer has a type-II superlattice structure,
- the superlattice structure includes a gallium indium arsenide layer and a gallium arsenide antimonide layer,
- the gallium indium arsenide layer has a compression strain, and
- the gallium arsenide antimonide layer has a tensile strain.
Dependencies are inferred from the claim text.