Photoelectric conversion apparatus, device, and method for manufacturing photoelectric conversion apparatus

A photoelectric conversion apparatus comprising:

• a first semiconductor substrate including a pixel including a photoelectric conversion element and a transistor, the first semiconductor substrate being stacked on a second semiconductor substrate, the first semiconductor substrate including a protection element and a plurality of the pixels arranged in a row direction and a column direction;
• and
• a first wiring structure including a first wiring line extending in at least one of the row direction and the column direction in such a manner as to overlap two or more pixels in a planar view, a signal to be applied to a gate electrode of the transistor passing through the first wiring line,
• wherein the first wiring line and the protection element are connected,
• wherein the first wiring line and the gate electrode of the transistor are connected, and
• wherein a reverse bias voltage is applied to a diode constituting the protection element.

A manufacturing method of a photoelectric conversion apparatus, the manufacturing method comprising:

• preparing a first substrate in which a first semiconductor substrate and a first wiring structure are stacked in this order;
• preparing a second substrate in which a second wiring structure and a second semiconductor substrate are stacked in this order;
• and
• bonding the first substrate and the second substrate in such a manner that the first wiring structure and the second wiring structure face each other,
• wherein the preparing the first substrate includes
• preparing a first semiconductor substrate including a protection element, and a plurality of pixels each including a photoelectric conversion element and a transistor that are arranged in a row direction and a column direction, and
• forming a first wiring line that is included in the first wiring structure and extends in at least one of the row direction and the column direction, in such a manner that the protection element and the first wiring line, and a gate electrode of the transistor and the first wiring line are connected, and
• wherein, in the bonding, the first wiring structure and the second wiring structure are bonded in such a manner that a wiring line included in the first wiring structure and a wiring line included in the second structure are bonded, and an interlayer insulation film included in the first wiring structure and an interlayer insulation film included in the second wiring structure come into contact with each other.