Encapsulation method for a-si sensor products
AssigneeDpix, LLC
InventorsGeun Jo Han, Jinhui Cho, Jerome David Crocco, Michael Johnson, Seyeoul Kwon
Life of this patent
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Abstract
A method for forming a sensor on a substrate comprises forming an initial interlayer dielectric (ILD) layer on a top surface and a side surface of the sensor, and on a top side of the substrate; etching back the initial ILD layer to reduce an initial “bread loaf” artifact; and forming a subsequent ILD layer on the initial ILD layer. The initial ILD layer comprises a first moisture permeation seam path, and the subsequent ILD layer comprises a second moisture permeation seam path offset from the first moisture permeation seam path.
Claims20
A method for forming a sensor on a substrate, the method comprising:
- forming an initial interlayer dielectric (ILD) layer on a top surface and a side surface of the sensor, and on a top side of the substrate;
- etching back the initial ILD layer to reduce an initial “bread loaf” artifact;
- and
- forming a subsequent ILD layer on the initial ILD layer.
A sensor comprising:
- a substrate;
- an image sensor on the substrate;
- an initial ILD layer on a top surface and a side surface of the image sensor, and on a top side of the substrate;
- and
- a subsequent ILD layer on the initial ILD layer, wherein the initial ILD layer comprises a first moisture permeation seam path, and wherein the subsequent ILD layer comprises a second moisture permeation seam path offset from the first moisture permeation seam path.
A sensor comprising:
- a substrate;
- an image sensor on the substrate;
- an initial ILD layer on a top surface and a side surface of the image sensor, and on a top side of the substrate, wherein the initial ILD layer has been etched back to reduce an initial “bread loaf” artifact;
- and
- a subsequent ILD layer on the initial ILD layer, wherein the subsequent ILD layer has been etched back to reduce a subsequent “bread loaf” artifact.
Dependencies are inferred from the claim text.