Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsKyoungmok SON, Hyounmin BAEK, Youngwoo CHUNG
Life of this patent
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Abstract
An image sensor including a first semiconductor substrate; a photoelectric conversion region within the first semiconductor substrate; a floating diffusion region within the first semiconductor substrate, the floating diffusion region storing charges transferred from the photoelectric conversion region; a transfer transistor on a front surface of the first semiconductor substrate, the transfer transistor electrically connecting the photoelectric conversion region to the floating diffusion region; a first insulating layer covering the front surface of the first semiconductor substrate and the transfer transistor; and a pixel transistor on the first insulating layer. The pixel transistor includes a thin film transistor.
Claims20
An image sensor comprising:
- a first semiconductor substrate;
- a photoelectric conversion region within the first semiconductor substrate;
- a floating diffusion region within the first semiconductor substrate, the floating diffusion region configured to store charges transferred from the photoelectric conversion region;
- a transfer transistor on a front surface of the first semiconductor substrate, the transfer transistor configured to electrically connect the photoelectric conversion region to the floating diffusion region;
- a first insulating layer covering the front surface of the first semiconductor substrate and the transfer transistor;
- and
- a pixel transistor on the first insulating layer, wherein the pixel transistor comprises a thin film transistor.
An image sensor comprising:
- a first semiconductor substrate;
- a photoelectric conversion region within the first semiconductor substrate;
- a floating diffusion region within the first semiconductor substrate, the floating diffusion region configured to store charges transferred from the photoelectric conversion region;
- a transfer transistor on a front surface of the first semiconductor substrate, the transfer transistor configured to electrically connect the photoelectric conversion region to the floating diffusion region;
- a first insulating layer covering the front surface of the first semiconductor substrate and the transfer transistor;
- and
- a plurality of pixel transistors on the first insulating layer, the plurality of pixel transistors each consisting of a thin film transistor,
- wherein the plurality of pixel transistors comprise a first pixel transistor and a second pixel transistor, and wherein the first pixel transistor and the second pixel transistor are different types of pixel transistors.
An image sensor comprising:
- a first stack comprising
- a first semiconductor substrate including a first surface and a second surface opposite the first surface,
- a photoelectric conversion region in the first semiconductor substrate, a floating diffusion region arranged in the first semiconductor substrate, the floating diffusion region configured to store charges transferred from the photoelectric conversion region,
- a transfer transistor on a front surface of the first semiconductor substrate, the transfer transistor configured to electrically connect the photoelectric conversion region to the floating diffusion region,
- a first insulating layer covering the front surface of the first semiconductor substrate and the transfer transistor, and
- a pixel transistor on the first insulating layer;
- and
- a second stack attached to the first stack, the first stack comprising a logic transistor configured to provide signals to the pixel transistor and the transfer transistor,
- wherein the pixel transistor comprises a thin film transistor including polysilicon.
Dependencies are inferred from the claim text.