Pixel of a light sensor and method of manufacturing

A method of manufacturing a pixel, comprising:

• forming an insulating layer extending along a first direction on a surface of an interconnect structure, the interconnect structure having a conductive element flush with the surface, the conductive element having a first length along the first direction;
• forming an opening extending through the insulating layer to the conductive element along a second direction transverse to the first direction, the opening having a second length along the first direction that is smaller than the first length of the conductive element;
• forming an electrode on and in contact with the conductive element and with the sidewalls of the opening extending through the insulating layer, the electrode having a top surface that is coplanar with a top surface of the insulating layer;
• and
• forming a film configured to convert photons into electron-hole pairs when a ray at an operating wavelength of the pixel reaches the pixel, the film being in direct physical contact with both the insulating layer and the electrode layer.

A method of manufacturing a device, comprising:

• forming semiconductor layer comprising a CMOS component;
• forming an interconnect structure on the semiconductor layer comprising a first conductive element flush with the upper surface of the interconnect structure and a second conductive element separated from the first conductive layer by an insulator material, wherein the first conductive element and the second conductive element are connected by a conductive via;
• forming an insulating layer on the interconnect structure;
• forming an opening in the insulating layer aligned with the first conductive element, the opening extending through the insulating layer;
• forming a first electrode in the opening and in contact with the first conductive element, the electrode including a first portion on the first conductive element and a second portion that is transverse to the first portion, the second portion being on sidewalls of the opening in the insulating layer;
• and
• forming a photosensitive film on the first electrode and the insulating layer.