Image sensor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Liang Lu, Wei-Lin Lin, Chun-Hao CHOU, Kuo-Cheng LEE
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Abstract
A method of forming a pixel array, includes: providing a substrate having a frontside and a backside; forming a recess in the frontside of the substrate for a front-side deep trench isolation (FDTI) feature; partially filling the recess with a sacrificial structure; forming an epitaxial grown silicon region in a top portion of the recess above the sacrificial structure and on the frontside of the substrate; forming a vertical transfer gate, photodetector, floating diffusion region, and p-well in the substrate; and completing the FDTI feature by replacing the sacrificial structure with a HK dielectric from the backside.
Claims20
A method, comprising:
- providing a substrate having a front side and a back side;
- forming a recess in the substrate that extends from a front side surface on the front side to an interior region of the substrate;
- forming a sacrificial structure in the recess;
- forming an epitaxial grown silicon region in a top portion of the recess above the sacrificial structure and on the front side of the substrate;
- forming a CMOS image sensor (CIS) device on the front side of the substrate;
- removing the sacrificial structure thereby creating an opening;
- and
- forming a HK dielectric layer in the opening.
A semiconductor device, comprising:
- a photo detector in a substrate having a front side and a back side;
- a vertical transfer gate (VTG) on the front side of the substrate;
- a first deep trench isolation (DTI) feature disposed in the substrate on a side of the photo detector;
- an epitaxial layer in the substrate disposed above the first DTI feature on a first side of the VTG;
- and
- a p-well disposed in the substrate around the epitaxial layer.
A method of forming a pixel array, comprising:
- providing a substrate having a frontside and a backside;
- forming a recess in the frontside of the substrate for a front-side deep trench isolation (FDTI) feature;
- partially filling the recess with a sacrificial structure;
- forming an epitaxial grown silicon region in a top portion of the recess above the sacrificial structure and on the frontside of the substrate;
- forming a vertical transfer gate, photodetector, floating diffusion region, and p-well in the substrate;
- and
- completing the FDTI feature by replacing the sacrificial structure with a HK dielectric from the backside.
Dependencies are inferred from the claim text.