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US 2026/0040696 A1Published application
Photodetector
AssigneeSharp Kabushiki Kaisha
InventorsTADAYOSHI MIYAMOTO, Fumiki Nakano
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Abstract
A photodetector includes a first thin-film transistor configured to convert light into an electric signal. The first TFT includes a first gate electrode, a first source electrode, a first drain electrode, and a first oxide semiconductor film striding between the first source electrode and the first drain electrode. The first gate electrode and the first source electrode are electrically connected to each other.
Claims5
A photodetector comprising a first thin-film transistor (TFT) configured to convert light into an electric signal,
- wherein the first TFT includes
- a first gate electrode,
- a first source electrode,
- a first drain electrode, and
- a first oxide semiconductor film striding between the first source electrode and the first drain electrode, and
- wherein the first gate electrode and the first source electrode are electrically connected to each other.
3 more elements
Dependencies are inferred from the claim text.