Semiconductor device

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a first insulator;
• forming an oxide film over the first insulator;
• performing a first heat treatment;
• forming a first conductive film over the oxide film;
• processing the oxide film and the first conductive film into an island shape to form an oxide and a conductive layer;
• forming a first insulating film over the oxide and the conductive layer;
• forming a second insulating film over the second insulating film;
• forming an opening reaching the oxide in the conductive layer, the first insulating film, and the second insulating film to form a first conductor, a second conductor, a second insulator, and a third insulator;
• performing a second heat treatment;
• forming a third insulating film over the third insulator and the opening;
• performing a first microwave treatment;
• forming a fourth insulating film over the third insulating film;
• forming a second conductive film over the fourth insulating film;
• performing a CMP treatment on the third insulating film, the fourth insulating film, and the second conductive film until a top surface of the third insulator is exposed to form a fourth insulator, a fifth insulator, and a third conductor;
• and
• forming a sixth insulator over the second insulator, the third insulator, and the fourth insulator.