Stacked semiconductor devices with coupled backside contacts

An electronic device, comprising:

• a chip package comprising one or more dies, at least one of the one or more dies comprising
• a first semiconductor device having a first semiconductor region extending from a first source or drain region in a first direction, and a first gate structure extending over the first semiconductor region in a second direction substantially orthogonal to the first direction;
• a second semiconductor device having a second semiconductor region extending from a second source or drain region in the first direction, and a second gate structure extending over the second semiconductor region in the second direction, wherein the second source or drain region is spaced from the first source or drain region in a third direction substantially orthogonal to the first and second directions;
• a first conductive contact extending in the third direction from the first source or drain region;
• a second conductive contact extending in the third direction from the second source or drain region;
• and
• a conductive structure between and contacting both the first conductive contact and the second conductive contact.

An integrated circuit comprising:

• a first semiconductor region extending from a first source or drain region in a first direction;
• a first gate structure extending over the first semiconductor region in a second direction substantially orthogonal to the first direction;
• a second semiconductor region extending from a second source or drain region in the first direction, wherein the second source or drain region is spaced from the first source or drain region in a third direction substantially orthogonal to the first and second directions;
• a second gate structure extending over the second semiconductor region in the second direction;
• a first conductive contact on at least a portion of the first source or drain region;
• a second conductive contact on at least a portion of the second source or drain region;
• a third conductive contact adjacent to the first source or drain region and extending in the third direction from the first conductive contact;
• a fourth conductive contact adjacent to the second source or drain region and extending in the third direction from the second conductive contact;
• and
• a conductive structure between and contacting both the third conductive contact and the fourth conductive contact.