Stacked transistor with 2d material channels

A semiconductor integrated circuit (IC) device comprising:

• a bottom source/drain region and a top source/drain region stacked above the bottom source/drain region;
• a bottom channel composed of a first two dimensional (2D) material connected to the bottom source/drain region;
• a top channel composed of a second 2D material that is different than the first 2D material and is connected to the top source/drain region;
• and
• wherein a vertical dimension of the top channel is greater than a vertical dimension of the bottom channel.

A semiconductor integrated circuit (IC) device comprising:

• a bottom source/drain region composed of a first metal and a top source/drain region composed of a second metal different from the first metal, the top source/drain region stacked above the bottom source/drain region;
• a bottom channel composed of a two dimensional (2D) material connected to the bottom source/drain region;
• and
• a top channel composed of the 2D material connected to the top source/drain region.