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US 2026/0040671 A1Published application
Semiconductor device structure and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Ging LIN, Hung Yu LIN, Chia-Chin LEE, Chun-Liang LAI, Yun-Chen WU
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Abstract
Embodiments of present disclosure relates to forming isolation structures in gate structures to prevent current leakage through source/drain regions (EPI), transistors, and silicon substrate. The isolation structures are arranged in a pattern with a long isolation structure adjacent a short isolation structure. The isolation structures may be formed in the gate structure prior to or after the replacement gate sequence.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a plurality of fin structures on the semiconductor substrate and extending along a first direction;
- a plurality of gate structures across the plurality of fin structures along a second direction;
- and
- a first isolation structure formed in a first gate structure of the plurality of gate structures, wherein the first isolation structure has a first length along the second direction, the first isolation structure cuts into a first fin structure of the plurality of fin structures for a first depth, the first isolation structure cuts into a second fin structure of the plurality of fin structures for a second depth, and the first depth is greater than the second depth.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a plurality of fin structures on the semiconductor substrate and extending along a first direction;
- a first gate structure disposed across the plurality of fin structures and extending along a second direction;
- a second gate structure disposed across the plurality of fin structures and extending along the second direction;
- a first isolation structure disposed in the first gate structure, wherein the first isolation structure has a first length along the second direction, and the first isolation structure cuts into a first fin structure and a second fin structure of the plurality of fin structures, and the first isolation structure cuts into the first fin structure and the second fin structure at different depths;
- and
- a second isolation structure disposed in the second gate structure, wherein the second isolation structure has a second length along the second direction, and the second isolation structure cuts into the first fin structure, and the first isolation structure and the second isolation structure cut the first fin structure at different depth.
4 more elements
A method, comprising:
- forming a plurality of fin structures on a substrate along a first direction;
- forming a plurality of gate structures across the plurality of fin structures along a second direction;
- depositing a mask layer over the plurality of gate structures;
- forming a pattern in the mask layer, wherein the pattern comprises:
- a first opening in align with a first gate structure of the plurality of gate structures, wherein the first opening has a first length along the second direction and expands a first fin structure and a second fin structure of the plurality of fin structures;
- forming a first isolation opening using the pattern in the mask layer, wherein the first isolation opening cuts into the first fin structure for a first depth and the second fin structure a second depth, and the first depth is greater than the second depth;
- and
- depositing a dielectric layer to fill the first isolation opening and the second isolation opening.
5 more elements
Dependencies are inferred from the claim text.