US 2026/0040666 A1Published application

Semiconductor device

AssigneeSamsung Electronics Co., Ltd.

InventorsSeongkwang KIM, Donghoon HWANG, Minwoo KIM, Byungho MOON, Wonchang LEE, Jaeho JEON, Jina KIM, Hyunsoo KIM

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Abstract

Provided is a semiconductor device including a lower source/drain pattern, a lower channel structure connected to the lower source/drain pattern, a lower gate electrode overlapping the lower channel structure and extending in a first direction, a lower active contact on the lower source/drain pattern, an upper channel structure overlapping the lower channel structure, an upper source/drain pattern connected to the upper channel structure, an upper gate electrode overlapping the upper channel structure and extending in the first direction, an interlayer structure between the lower channel structure and the upper channel structure, and a through active contact extending through the interlayer structure, and electrically connected to the upper source/drain pattern and the lower active contact.

Claims20

Dependent claims

A semiconductor device comprising:

a lower source/drain pattern;
a lower channel structure connected to the lower source/drain pattern;
a lower gate electrode overlapping the lower channel structure, the lower gate electrode extending in a first direction;
a lower active contact on the lower source/drain pattern;
an upper channel structure overlapping the lower channel structure;
an upper source/drain pattern connected to the upper channel structure;
an upper gate electrode overlapping the upper channel structure, the upper gate electrode extending in the first direction;
an interlayer structure between the lower channel structure and the upper channel structure;
and
a through active contact extending through the interlayer structure, the through active contact electrically connected to the upper source/drain pattern and the lower active contact,
wherein the lower active contact includes an active conductive portion and an active via portion, the active conductive portion being on the lower source/drain pattern, the active via portion being on the active conductive portion, and
a width in the first direction of the active conductive portion is greater than a width in the first direction of the active via portion.

9 more elements

A semiconductor device comprising:

a lower source/drain pattern;
a lower channel structure connected to the lower source/drain pattern;
a lower gate electrode overlapping the lower channel structure, the lower gate electrode extending in a first direction;
a lower active contact on the lower source/drain pattern;
an upper channel structure overlapping the lower channel structure;
an upper source/drain pattern connected to the upper channel structure;
an upper gate electrode overlapping the upper channel structure, the upper gate electrode extending in the first direction;
an interlayer structure between the lower channel structure and the upper channel structure;
a mask layer between the interlayer structure and the lower active contact;
a through active contact extending through the interlayer structure and the mask layer, the through active contact electrically connected to the upper source/drain pattern and the lower active contact;
and
a gate connection contact electrically connected to the lower gate electrode and the upper gate electrode,
wherein the lower active contact includes an active conductive portion and an active via portion, the active conductive portion being on the lower source/drain pattern, the active via portion being on the active conductive portion,
the lower gate electrode includes a gate conductive portion and a gate via portion, the gate conductive portion overlapping the lower channel structure, the gate via portion being on the gate conductive portion, and
the active via portion and the gate via portion are at higher levels than a lower surface of the mask layer.

12 more elements

Dependencies are inferred from the claim text.