Semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsKohei OASA, Kentaro ICHINOSEKI, Yoko IWAKAJI
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Abstract
A semiconductor device includes a first electrode, a substrate that has a first semiconductor region, a second semiconductor region and a third semiconductor region and a second electrode provided on the substrate. The semiconductor device has a conductor, an insulator, a gate electrode provided around the conductor and a gate insulating film. The gate insulating film has a plurality of curves. The plurality of curves includes a curve that has a first radius of curvature R1 and a curve that has a second radius of curvature R2 smaller than the first radius of curvature R1.
Claims17
A semiconductor device comprising:
- a first electrode;
- a substrate that includes
- a first semiconductor region with a first conductivity type provided on the first electrode,
- a second semiconductor region with a second conductivity type provided on the first semiconductor region, and
- a third semiconductor region with the first conductivity type provided on the second semiconductor region;
- a second electrode provided on the substrate;
- a conductor provided between the first semiconductor region and the second electrode;
- an insulator provided between the conductor and the substrate;
- a gate electrode provided around the conductor and provided between the first semiconductor region and the second electrode;
- and
- a gate insulating film provided between the gate electrode and the substrate, wherein
- the gate insulating film has a plurality of curves in a first plane including a second direction intersecting with a first direction and a third direction intersecting with the first direction and the second direction, where the first direction is from the first electrode toward the first semiconductor region, and
- the plurality of curves includes a curve having a first radius of curvature R1 and a curve having a second radius of curvature R2 smaller than the first radius of curvature R1.
A semiconductor device comprising:
- a first electrode;
- a substrate that includes a first semiconductor region with a first conductivity type provided on the first electrode,
- a second semiconductor region with a second conductivity type provided on the first semiconductor region, and
- a third semiconductor region with the first conductivity type selectively provided on the second semiconductor region;
- a second electrode provided on the substrate;
- a conductor provided between the first semiconductor region and the second electrode;
- an insulator provided between the conductor and the substrate;
- a gate electrode provided around the conductor and provided between the first semiconductor region and the second electrode;
- and
- a gate insulating film provided between the gate electrode and the substrate, wherein
- the gate insulating film has a plurality of curves in a first plane including a second direction intersecting with a first direction and a third direction intersecting with the first direction and the second direction, where the first direction is from the first electrode toward the first semiconductor region, and
- the plurality of curves includes a portion where the gate insulating film is provided with a first thickness, and a portion where the gate insulating film is provided with a second thickness smaller than the first thickness.
Dependencies are inferred from the claim text.