Semiconductor device structure and methods of forming the same
OwnerShu-Uei JANG, Shih-Yao LINinventors
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Abstract
Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a semiconductor layer disposed over a substrate, and the semiconductor layer has a first length and a first width. The structure further includes a first inner spacer disposed on the semiconductor layer, and the first inner spacer has a second length substantially less than the first length and a second width substantially greater than the first width. The structure further includes a gate structure disposed adjacent the first inner spacer, and the gate structure surrounds at least a portion of the semiconductor layer.
Claims20
A semiconductor device structure, comprising:
- a semiconductor layer disposed over a substrate, wherein the semiconductor layer has a first length and a first width;
- a first inner spacer disposed on the semiconductor layer, wherein the first inner spacer has a second length substantially less than the first length and a second width substantially greater than the first width;
- and
- a gate structure disposed adjacent the first inner spacer, wherein the gate structure surrounds at least a portion of the semiconductor layer.
A semiconductor device structure, comprising:
- a first semiconductor layer disposed over a substrate;
- one or more liners disposed adjacent the first semiconductor layer;
- a dielectric layer disposed adjacent the one or more liners;
- a gate structure surrounding at least a portion of the first semiconductor layer;
- a sacrificial gate dielectric layer in contact with the gate structure;
- and
- a first inner spacer disposed on the first semiconductor layer, wherein the first inner spacer is disposed between the dielectric layer and the sacrificial gate dielectric layer, and the first inner spacer is in contact with one or more side surfaces of the one or more liners.
A method for forming a semiconductor device structure, comprising:
- forming a fin structure, wherein the fin structure comprises a first semiconductor layer and a second semiconductor layer;
- forming one or more liners around the fin structure;
- forming a dielectric layer on the one or more liners;
- forming a sacrificial gate structure over a portion of the fin structure;
- recessing exposed portions of the fin structure;
- removing edge portions of the second semiconductor layer to create cavities and to expose portions of the one or more liners;
- enlarging the cavities by removing the exposed portions of the one or more liners;
- and
- forming inner spacers in the cavities.
Dependencies are inferred from the claim text.