Semiconductor device having flexible assembled abutting regions

A semiconductor device comprising:

• a first functional block comprising:
• a first region having a first oxide diffusion region and a second oxide diffusion region;
• a first assembled abutting region adjacent to the first region and having a first dummy oxide diffusion region and a second dummy oxide diffusion region, wherein
• the second dummy oxide diffusion region comprises an upper dummy oxide diffusion region and a lower dummy oxide diffusion region;
• the first oxide diffusion region is contact with and is aligned with the first dummy oxide diffusion region;
• the second oxide diffusion region is contact with the upper dummy oxide diffusion region and the lower dummy oxide diffusion region;
• and
• wherein an end of the first oxide diffusion region is aligned with a boundary of the first functional block and an end of the second oxide diffusion region is aligned with the boundary of the first functional block from the top view.

A method for manufacturing a semiconductor device comprising:

• forming a semiconductor substrate;
• forming a dielectric layer on the semiconductor substrate;
• forming a semiconductor device in the dielectric layer;
• wherein the semiconductor device comprises:
• a first functional block comprising:
• a first region having a first oxide diffusion region and a second oxide diffusion region;
• a first assembled abutting region adjacent to the first region and comprising a first dummy oxide diffusion region and a second dummy oxide diffusion region, wherein
• the first oxide diffusion region is contact with the first dummy oxide diffusion region;
• the second oxide diffusion region is contact with the second dummy oxide diffusion region;
• an end of the first dummy oxide diffusion region is aligned with a boundary of the first functional block from the top view;
• and
• an end of the second dummy oxide diffusion region is aligned with the boundary of the first functional block from the top view.