Semiconductor device and method for fabricating the same
AssigneeNanya Technology Corporation
InventorHUNG-CHI TSAI
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Abstract
The present application discloses semiconductor device, including a gate structure arranged on a substrate; a plurality of word lines arranged apart from the gate structure; two porous spacers arranged on two sides of the gate structure; and a first insulating layer arranged on the substrate laterally surrounding the gate structure and the porous spacers; and a second insulating layer arranged over the first insulating layer, wherein a top surface of the gate structure, top surfaces of the plurality of word lines and a top surface of the second insulating layer are level with each other, and wherein a porosity of the porous spacers is between about 25% and about 100%.
Claims10
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a gate structure on the substrate;
- forming a plurality of word lines on the substrate and apart from the gate structure, having top surfaces at a same vertical level as a top surface of the gate structure;
- depositing an energy-removable material on two sides of the gate structure;
- and
- performing an energy treatment to transform the energy-removable material into a porous spacer, wherein a porosity of the porous spacer layer is between about 25% and about 100%.
Dependencies are inferred from the claim text.