Bypassed gate transistors having improved stability
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsJeremy Fisher, Khaled Fayed, Simon Wood
Life of this patent
Estimating the term…
Abstract
A transistor device includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.
Claims20
A transistor, comprising:
- a semiconductor layer structure;
- a source contact that extends in a first direction on an upper surface of the semiconductor layer structure;
- a drain contact that extends in the first direction on the upper surface of the semiconductor layer structure;
- a gate finger that extends in the first direction on the upper surface of the semiconductor layer structure, the gate finger positioned between the source contact and the drain contact;
- wherein one of the source contact and the drain contact comprises, on the upper surface of the semiconductor layer structure, a first widened portion, a second widened portion and a narrowed portion that is in between the first widened portion and the second widened portion, and
- wherein the first widened portion, the second widened portion and the narrowed portion are each positioned in between the gate finger and the other of the source contact and the drain contact and overlap the gate finger and the other of the source contact and the drain contact in a first direction that is perpendicular to a longitudinal axis of the source contact and that is parallel to a lower surface of the semiconductor layer structure.
A transistor, comprising:
- a semiconductor layer structure;
- a drain contact that extends in a first direction on the upper surface of the semiconductor layer structure;
- a source contact that extends in the first direction on an upper surface of the semiconductor layer structure, the source contact including a first widened portion and a narrowed portion that is adjacent the first widened portion;
- a gate jumper that extends above and overlaps the source contact;
- an insulating layer between the source contact and the gate jumper;
- and
- a first conductive via that extends through the insulating layer that is electrically connected to the gate jumper, the first conductive via positioned adjacent the first narrowed portion of the source contact.
A transistor comprising:
- a semiconductor layer structure;
- a first unit cell transistor that comprises:
- a source contact that extends in a first direction on an upper surface of the semiconductor layer structure, the source contact including a first widened portion and a narrowed portion that is adjacent the first widened portion;
- a drain contact that extends in the first direction on the upper surface of the semiconductor layer structure;
- a gate finger that extends in the first direction on the upper surface of the semiconductor layer structure, the gate finger positioned between the source contact and the drain contact;
- and
- a source bus that is connected to the source contact by a source contact plug.
Dependencies are inferred from the claim text.