Gallium nitride-based semiconductor devices with dielectric segments and methods of fabrication thereof
OwnerDong Seup Lee, Seongmo Hwang +1inventors
InventorsDong Seup Lee, Seongmo Hwang, Jungwoo Joh
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Abstract
Semiconductor devices and fabrication methods thereof are described. For example, a semiconductor device includes a GaN heterojunction structure disposed on a substrate. The GaN heterojunction structure includes a barrier layer disposed on a GaN layer. The semiconductor device further includes a source contact, a drain contact, and a gate electrode. The gate electrode is disposed above the GaN heterojunction structure and between the source contact and the drain contact. The semiconductor device still further includes a plurality of segments of dielectric material disposed on the barrier layer between the source contact and the drain contact.
Claims25
A semiconductor device, comprising:
- a gallium nitride (GaN) heterojunction structure disposed on a substrate, the GaN heterojunction structure including a barrier layer disposed on a GaN layer;
- a source contact, a drain contact, and a gate electrode, the gate electrode disposed above the GaN heterojunction structure and between the source contact and the drain contact;
- and
- a plurality of segments of dielectric material disposed on the barrier layer between the source contact and the drain contact.
A semiconductor device, comprising:
- a gallium nitride (GaN) heterojunction structure disposed on a substrate, the GaN heterojunction structure including a barrier layer disposed on a GaN layer;
- a source contact, a drain contact, and a gate electrode, the gate electrode disposed above the GaN heterojunction structure and between the source contact and the drain contact;
- a first silicon nitride layer including a first segment and a second segment, the first segment and the second segment disposed on the barrier layer and separated by a gate region;
- and
- a second silicon nitride layer disposed on the first segment and the second segment.
A method of fabricating a semiconductor device, comprising:
- forming a gallium nitride (GaN) heterojunction structure on a substrate, the GaN heterojunction structure including a barrier layer formed on a GaN layer;
- forming a first dielectric layer on the barrier layer, the first dielectric layer formed using an in-situ dielectric deposition process;
- forming a second dielectric layer on the first dielectric layer, the second dielectric layer formed using an ex-situ dielectric deposition process;
- forming a gate electrode above the barrier layer;
- and
- forming a source contact and a drain contact on opposite sides of the gate electrode;
- wherein the first dielectric layer comprises a plurality of segments of dielectric material.
Dependencies are inferred from the claim text.