Group iii-n device including a hydrogen-blocking layer

Abstract

Semiconductor devices including one or more hydrogen-blocking layers are described. In one example, a semiconductor device comprises a semiconductor substrate including a source region, a gate region, a drain region, and a drain access region, where a heterojunction structure is disposed over the semiconductor substrate. The heterojunction structure includes a buffer layer over the semiconductor substrate and a barrier layer over the buffer layer. A p-doped III-N layer is disposed over the barrier layer in the gate region and a gate electrode is formed over the p-doped III-N layer. A first hydrogen-blocking layer is disposed over the gate electrode where the first hydrogen-blocking layer is configured to arrest diffusion of hydrogen into the p-doped III-N layer from a dielectric layer formed after forming the gate electrode.

Dependencies are inferred from the claim text.