Semiconductor containing amorphous tellurium oxide, thin film transistor including same, and fabrication method therefor
AssigneePostech Research and Business Development Foundation
InventorsYong-Young NOH, Ao LIU
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Abstract
Disclosed are a semiconductor comprising amorphous tellurium oxide, thin film transistor and method of fabricating same. In detail, a semiconductor comprising a chalcogen atom comprising at least one selected from the group consisting of a sulfur atom (S) and a selenium atom (Se); and tellurium composite comprising a tellurium (Te) atom and tellurium oxide. A thin film transistor (TFT) fabricated based on the TeOx channel layer according to the present disclosure exhibits excellent output/transfer characteristics and superior electrical performance with high hole field-effect mobility and a high on/off current ratio of ˜107.
Claims20
A semiconductor comprising:
- a chalcogen atom comprising at least one selected from the group consisting of a sulfur (S) atom and a selenium (Se) atom;
- and
- a tellurium composite comprising a tellurium (Te) atom and a tellurium oxide.
A method of fabricating a semiconductor layer, the method comprising:
- (a) preparing a mixture by mixing a chalcogen comprising at least one selected from the group consisting of a sulfur (S) atom and a selenium (Se) atom and a tellurium dioxide (TeO2);
- and
- (b) depositing the mixture to form a semiconductor layer comprising a semiconductor,
- wherein the semiconductor comprises
- a chalcogen atom comprising at least one selected from the group consisting of a sulfur (S) atom and a selenium (Se) atom;
- and
- a tellurium composite comprising a tellurium (Te) atom and a tellurium oxide.
A method of fabricating a thin film transistor, the method comprising:
- (1) preparing a gate electrode/insulating layer laminate comprising a gate electrode and an insulating layer positioned on the gate electrode;
- (2) forming a semiconductor layer comprising a semiconductor on the insulating layer;
- and
- (3) forming a source electrode and a drain electrode on the semiconductor layer,
- wherein the semiconductor comprises
- a chalcogen atom comprising at least one selected from the group consisting of a sulfur (S) atom and a selenium (Se) atom;
- and
- a tellurium composite comprising a tellurium (Te) atom and a tellurium oxide.
Dependencies are inferred from the claim text.