Multilayer trench capacitor and method of making the same

A method of forming a semiconductor structure, comprising:

• forming a first trench and a second trench in an upper portion of a semiconductor substrate by performing an etch process that simultaneously removes a first portion and a second portion of the semiconductor substrate;
• forming a trench isolation structure comprising a first portion of a dielectric fill material in the first trench and forming a void within the second trench;
• and
• forming in-trench capacitor material assembly within the second trench, the in-trench capacitor material assembly comprising a doped substrate electrode layer, at least one primary electrode layer, at least one complementary electrode layer, and node dielectric layers, wherein each neighboring pair among the doped substrate electrode layer, the at least one primary electrode layer, and the at least one complementary electrode layer is spaced from each other by a respective one of the node dielectric layers.