Logic-uppermost semiconductor device assemblies with multi-reticle dies and reticle-bridging conductors

A semiconductor device assembly, comprising:

• a redistribution layer (RDL) including:
• an external surface including a plurality of external contacts,
• an internal surface including a plurality of internal contacts, and
• a plurality of conductors operably coupling individual ones of the plurality of internal contacts to individual ones of the plurality of external contacts;
• a device connection layer including:
• a first surface having a first plurality of contact pads,
• a second surface opposite the first surface and having a second plurality of contact pads,
• a first plurality of conductive structures electrically coupling each of the first plurality of contact pads to a corresponding contact pad of the second plurality of contact pads, and
• a second plurality of conductive structures electrically coupling each of a first subset of the second plurality of contact pads to a corresponding contact pad of a second subset of the second plurality of contact pads;
• and
• a plurality of stacks of semiconductor devices disposed between the RDL and the device connection layer and electrically coupling individual ones of the plurality of internal contacts to individual ones of the first plurality of contact pads through TSVs disposed in the plurality of stacks.

A method of making a semiconductor device assembly, comprising:

• providing a semiconductor device sub-assembly, the semiconductor device sub-assembly including:
• a redistribution layer (RDL) including an external surface including a plurality of external contacts, an internal surface including a plurality of internal contacts, and a plurality of conductors operably coupling individual ones of the plurality of internal contacts to individual ones of the plurality of external contacts;
• a device connection layer including a first surface having a first plurality of contact pads, a second surface opposite the first surface and having a second plurality of contact pads, a first plurality of conductive structures electrically coupling each of the first plurality of contact pads to a corresponding contact pad of the second plurality of contact pads, and a second plurality of conductive structures electrically coupling each of a first subset of the second plurality of contact pads to a corresponding contact pad of a second subset of the second plurality of contact pads;
• and
• a plurality of stacks of semiconductor devices disposed between the RDL and the device connection layer and electrically coupling individual ones of the plurality of internal contacts to individual ones of the first plurality of contact pads through TSVs disposed in the plurality of stacks,
• bonding a second semiconductor device to the second surface of the device connection layer of the semiconductor device sub-assembly, wherein the second semiconductor device includes a continuous semiconductor substrate having first and second circuit regions separated from one another by a reticle-edge region absent any electrical conductors, such that bonding the second semiconductor device to the semiconductor device sub-assembly electrically couples the first and second circuit regions to each other through the second plurality of conductive structures.