Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorNam Jae LEE
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Abstract
A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include first and second vertical conductive patterns isolated from each other by a first slit. The semiconductor device may include at least one first half conductive pattern extending toward a first region disposed at one side of the first slit from the first vertical conductive pattern. The semiconductor device may include at least one second half conductive pattern extending toward a second region disposed at the other side of the first slit from the second vertical conductive pattern.
Claims10
A semiconductor device comprising:
- a word line;
- a first select structure including a first conductive pattern, the first conductive pattern spaced apart from a first portion of the word line in a first direction;
- a second select structure including a second conductive pattern, the second conductive pattern spaced apart from a second portion of the word line in the first direction;
- a first group of channel pillars penetrating the first conductive pattern and the first portion of the word line;
- and
- a second group of channel pillars penetrating the second conductive pattern and the second portion of the word line,
- wherein the first group of channel pillars includes a first channel pillar closer to the second group of channel pillars than the first conductive pattern,
- wherein the second group of channel pillars includes a second channel pillar closer to the first group of channel pillar than the second conductive pattern.
Dependencies are inferred from the claim text.