Microelectronic devices, memory devices, and associated systems and methods
AssigneeMicron Technology, Inc.
InventorsAnna Maria Conti, Qui V. Nguyen, Mun Pyo Hong
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AssigneeMicron Technology, Inc.
InventorsAnna Maria Conti, Qui V. Nguyen, Mun Pyo Hong
Estimating the term…
The microelectronic device includes blocks. Each block includes a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. The microelectronic device further includes an array of block select (BS) devices vertically offset from the blocks. The array includes a first row of BS devices comprising double-gated BS devices, the double-gated BS devices respectively having two transistors sharing a source region. The array further includes a second row of BS devices comprising single-gated BS devices respectively having only one transistor. The array also includes a global word line structure coupled to a first source region of one of the double-gated BS devices of the first row of BS devices and a second source region of one of the single-gated BS devices of the second row of BS devices.
A microelectronic device comprising:
An electronic system, comprising:
A memory device comprising:
Dependencies are inferred from the claim text.