Microelectronic devices including stadium structures, and related memory devices and electronic systems

A memory device, comprising:

• a stack structure comprising blocks horizontally extending in parallel in a first direction separated from one another in a second direction orthogonal to the first direction by dielectric-filled slot structures, the blocks respectively comprising:
• tiers vertically stacked relative to one another and individually comprising conductive material vertically neighboring insulative material;
• a stadium structure including opposing staircase structures respectively having steps comprising edges of the tiers;
• and
• six sub-block regions partially defined by five additional dielectric-filled slot structures horizontally extending in parallel in the first direction and vertically extending through an upper group of the tiers;
• and
• strings of memory cells within horizontal areas of and vertical extending through the blocks of the stack structure.

An electronic system, comprising:

• an input device;
• an output device;
• a processor device operably coupled to the input device and the output device;
• and
• a memory device operably coupled to the processor device and comprising:
• a stack structure having tiers, each tier including conductive material vertically neighboring insulative material, the stack structure divided into blocks separated from one another by dielectric-filled slot structures, the blocks respectively comprising:
• a stadium structure including staircase structures having steps comprising edges of an upper group of the tiers of the stack structure;
• a crest region horizontally neighboring the stadium structure in a first direction;
• a bridge region integral with the crest region and horizontally interposed between the dielectric-filled slot structures and the stadium structure in a second direction orthogonal to the first direction;
• five additional dielectric-filled slot structures partially defining six sub-block regions, the five additional dielectric-filled slot structures vertically extending through the upper group of the tiers of the stack structures, horizontally extending in parallel with one another in the first direction, and horizontally alternating with the six sub-blocks in the second direction;
• and
• two further dielectric-filled slot structures within the crest region, the two further dielectric-filled slot structures vertically extending through the upper group of the tiers of the stack structures, and respectively horizontally extending in the second direction from one of the dielectric-filled slot structures to one of the five additional dielectric-filled slot structures;
• and
• strings of memory cells vertically extending through the blocks.