Method for programming memory device, memory device and memory system
AssigneeYangtze Memory Technologies Co., Ltd.
InventorYu WANG
Life of this patent
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Abstract
The present disclosure provides a programming method, a memory device and a memory system. The method includes, based on coupling offsets, dividing target programmed states into N groups, each group corresponding to a different first programmed state, wherein an i-th group has Ki number of different target programmed states and corresponds to an i-th first programmed state. At least two groups of target programmed states have two different numbers of target programmed states. The method also includes performing a first program operation to program memory cells to respective first programmed states; and performing a second program operation to program an i-th group of memory cells at the i-th first programmed state to Ki number of different target programmed states.
Claims20
A method for operating a memory device comprising memory cells and word lines coupled to the memory cells, the method comprising:
- performing a first program operation to program target memory cells coupled to a word line of the word lines into N levels;
- and
- performing a second program operation to program the target memory cells coupled to the word line from N levels into M levels after the first program operation,
- wherein the first program operation comprises:
- performing a first loop by programming a first set of the target memory cells into a first level of the N levels and verifying the first set of the target memory cells;
- performing a second loop by only programming a second set of the target memory cells into a second level of the N levels;
- and
- continuously performing a third loop by only programing the second set of the target memory cells into the second level of the N levels,
- wherein both N and M are positive integers, and wherein N≤M.
A memory device, comprising:
- memory cells and word lines coupled to the memory cells;
- and
- a peripheral circuit coupled to the memory cells and configured to:
- perform a first program operation to program target memory cells coupled to a word line of the word lines into N levels;
- and
- perform a second program operation to program the target memory cells coupled to the word line from N levels into M levels after the first program operation,
- wherein the first program operation comprises:
- performing a first loop by programming a first set of the target memory cells into a first level of the N levels and verifying the first set of the target memory cells;
- performing a second loop by only programming a second set of the target memory cells into a second level of the N levels;
- and
- continuously performing a third loop by only programing the second set of the target memory cells into the second level of the N levels,
- wherein both N and M are positive integers, and wherein NEM.
A memory system, comprising:
- a memory controller coupled to a memory device and configured to control the memory device, wherein the memory device comprises:
- memory cells and word lines coupled to the memory cells;
- and
- a peripheral circuit coupled to the memory cells and configured to:
- perform a first program operation to program target memory cells coupled to a word line of the word lines into N levels;
- and
- perform a second program operation to program the target memory cells coupled to the word line from N levels into M levels after the first program operation,
- wherein the first program operation comprises:
- performing a first loop by programming a first set of the target memory cells into a first level of the N levels and verifying the first set of the target memory cells;
- performing a second loop by only programming a second set of the target memory cells into a second level of the N levels;
- and
- continuously performing a third loop by only programing the second set of the target memory cells into the second level of the N levels,
- wherein both N and M are positive integers, and wherein N≤M.
Dependencies are inferred from the claim text.