Machine-learning-based system health monitoring of a memory device

A method comprising:

• causing, by a processing device, a health scan to be performed on a block family of a plurality of block families of a memory device that comprises a plurality of dies, wherein the block family comprises a plurality of blocks residing within one or more dies of the plurality of dies;
• updating, for each read sample taken during the health scan of the block family, an assignment of a voltage offset bin of a plurality of voltage offset bins;
• providing the updated assignments to the plurality of voltage offset bins to a machine learning trigger rate (TR) model;
• receiving, from the machine learning TR model, a code word error rate (CWER) distribution of the memory device;
• and
• in response to determining that a TR margin value associated with the CWER distribution does not satisfy a threshold value, causing, by the processing device, a data associated with the block family to be refreshed.

A non-transitory computer-readable storage medium storing instructions, which when executed by a processing device coupled to a memory device of a memory sub-system, causes the processing device to perform operations comprising:

• causing a health scan to be performed on a block family of a plurality of block families of a memory device that comprises a plurality of dies, wherein the block family comprises a plurality of blocks residing within one or more dies of the plurality of dies;
• updating, for each read sample taken during the health scan of the block family, an assignment of a voltage offset bin of a plurality of voltage offset bins;
• providing the updated assignments to the plurality of voltage offset bins to a machine learning trigger rate (TR) model;
• receiving, from the machine learning TR model, a code word error rate (CWER) distribution of the memory device;
• and
• in response to determining that a TR margin value associated with the CWER distribution satisfies a threshold value, executing the machine learning TR model with a new set of updated assignments of the read samples to the plurality of voltage offset bins.