US 2026/0037360 A1 · ENHANCED ERROR HANDLING IN MEMORY SYSTEMS

Abstract

Methods, systems, and devices for enhanced error handling in memory systems are described. A memory system may enter a read error handling procedure to recover data from a memory cell. For example, the memory system may perform multiple read operations at respective first read levels to identify a voltage valley associated with the data in the memory cell. Based on identifying the voltage valley, the memory system may read the data from the memory cell according to a second read level, where the second read level may be based on one of the first read levels, a first learning rate parameter, and a first momentum parameter. The memory system may determine whether to exit the error handling procedure or continue with the error handling procedure based on whether the data was successfully decoded in response to the read operation at the second read level.

Claims23

Dependent claims

A memory system, comprising:

one or more memory devices;
and
processing circuitry coupled with the one or more memory devices and configured to cause the memory system to:
read, during an error handling procedure, data from a memory cell according to a first read level;
read, during the error handling procedure, the data from the memory cell according to a second read level, wherein the second read level is based at least in part on a difference between the first read level and a product of a first learning rate parameter and a first momentum parameter;
read, during the error handling procedure, the data from the memory cell according to a third read level, wherein the third read level is based at least in part on a difference between the second read level and a product of a second learning rate parameter and a second momentum parameter;
and
determine whether to exit the error handling procedure or continue the error handling procedure based at least in part on reading the data from the memory cell according to the second read level and the third read level.

5 more elements

A method for operating a memory system, comprising:

reading, during an error handling procedure, data from a memory cell according to a first read level;
reading, during the error handling procedure, the data from the memory cell according to a second read level, wherein the second read level is based at least in part on a difference between the first read level and a product of a first learning rate parameter and a first momentum parameter;
reading, during the error handling procedure, the data from the memory cell according to a third read level, wherein the third read level is based at least in part on a difference between the second read level and a product of a second learning rate parameter and a second momentum parameter;
and
determining whether to exit the error handling procedure or continue the error handling procedure based at least in part on reading the data from the memory cell according to the second read level and the third read level.

2 more elements

Dependencies are inferred from the claim text.

Enhanced error handling in memory systems

Life of this patent

Enhanced error handling in memory systems

Life of this patent

Abstract

Claims23