Write booster pinning

A memory system, comprising:

• a memory device;
• and
• one or more controllers coupled with the memory device and configured to cause the memory system to:
• receive, at the memory device operating in a first mode associated with a first type of write operation, a write command comprising first data and an indication that the first data comprises temporary data, the memory device comprising a memory array having a first portion associated with the first type of write operation and a second portion associated with a second type of write operation;
• determine whether one or more characteristics of the first portion of the memory array satisfy a threshold in accordance with receiving the write command;
• and
• write the first data associated with the write command to a first block of memory cells in the second portion of the memory array using the second type of write operation in accordance with determining that the one or more characteristics of the first portion of the memory array do not satisfy the threshold.

A method by a memory system, comprising:

• receiving, at a memory device of the memory system, the memory device operating in a first mode associated with a first type of write operation, a write command comprising first data and an indication that the first data comprises temporary data, the memory device comprising a memory array having a first portion associated with the first type of write operation and a second portion associated with a second type of write operation;
• determining whether one or more characteristics of the first portion of the memory array satisfy a threshold in accordance with receiving the write command;
• and
• writing the first data associated with the write command to a first block of memory cells in the second portion of the memory array using the second type of write operation in accordance with determining that the one or more characteristics of the first portion of the memory array do not satisfy the threshold.

A non-transitory computer-readable medium storing code comprising instructions which, when executed by processing circuitry of a memory system, cause the memory system to:

• receive, at a memory device of the memory system, the memory device operating in a first mode associated with a first type of write operation, a write command comprising first data and an indication that the first data comprises temporary data, the memory device comprising a memory array having a first portion associated with the first type of write operation and a second portion associated with a second type of write operation;
• determine whether one or more characteristics of the first portion of the memory array satisfy a threshold in accordance with receiving the write command;
• and
• write the first data associated with the write command to a first block of memory cells in the second portion of the memory array using the second type of write operation in accordance with determining that the one or more characteristics of the first portion of the memory array do not satisfy the threshold.