Operating method of page buffer for read operation of semiconductor device
AssigneeSK hynix Inc.
InventorJae Woong KIM
Life of this patent
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Abstract
An operating method of a semiconductor device includes receiving a read command and sensing a memory cell adjacent to a target memory cell of the read command. The method also includes sensing the target memory cell at a first sensing time and sensing the target memory cell at a second sensing timing. The method further includes outputting, as data, a value sensed at the first sensing time or a value sensed at the second sensing time on the basis of a sensing value of the memory cell adjacent to the target memory cell.
Claims13
An operating method of a semiconductor device, the method comprising:
- receiving a read command;
- sensing a memory cell adjacent to a target memory cell of the read command;
- sensing the target memory cell at a first sensing time;
- sensing the target memory cell at a second sensing time;
- and
- outputting, as data, a value sensed at the first sensing time or a value sensed at the second sensing time on the basis of a sensing value of the memory cell adjacent to the target memory cell.
An operating method of a page buffer, the method comprising:
- connecting a sensing node of the page buffer to a bit line during a read operation;
- sensing the sensing node by driving a first word line and storing a first sensed value in a first latch;
- sensing the sensing node at a first time by driving a second word line and storing a second sensed value in a second latch;
- sensing the sensing node at a second time after the storing of the sensed value in the first latch and storing a third sensed value in a third latch;
- and
- outputting the second sensed value stored in the second latch or the third sensed value stored in the third latch as data on the basis of the first sensed value stored in the first latch.
A page buffer comprising:
- a first latch that senses a first voltage value of a sensing node formed by a first word line;
- a second latch that senses a second voltage value of the sensing node formed by a second word line adjacent to the first word line;
- and
- a third latch that senses a third voltage value of the sensing node formed by the second word line, wherein the third voltage value is sensed at a different time from when the second voltage value is sensed.
Dependencies are inferred from the claim text.